Novel Gate Fabrication Process Enhancing High-Frequency Operation in AlGaN/GaN HEMTs for Ka-Band Applications
In this study, AlGaN/GaN high-electron-mobility-transistor (HEMTs) with a small gate length were fabricated using a stepper. Additionally, a novel gate fabrication process was conducted to shrink the gate head, thus reducing the parasitic capacitance of the device to achieve high-power amplifier per...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/11062583/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | In this study, AlGaN/GaN high-electron-mobility-transistor (HEMTs) with a small gate length were fabricated using a stepper. Additionally, a novel gate fabrication process was conducted to shrink the gate head, thus reducing the parasitic capacitance of the device to achieve high-power amplifier performance. The device performance in the research demonstrated a steady-state current density (Idss) of 975 mA/mm and a maximum transconductance (gm) of 369 mS/mm at a 20 V bias. Moreover, the cut-off frequency (fT) reached 50.6 GHz, and the maximum oscillation frequency (fmax) achieved 161 GHz as measured by S-parameter measurement. In the load-pull system, the frequency operation is under 28 GHz. For the <inline-formula> <tex-math notation="LaTeX">$2\times 50~\mu $ </tex-math></inline-formula>m device at a drain bias of 20 V, it exhibits a maximum output power density (Pout) of 2.83 W/mm with a maximum 24.97% power-added efficiency (PAE). Additionally, for the <inline-formula> <tex-math notation="LaTeX">$8\times 50~\mu $ </tex-math></inline-formula>m device at a drain bias of 32V, it achieves a <inline-formula> <tex-math notation="LaTeX">$\mathrm { P_{out}}$ </tex-math></inline-formula> of 1.27 W (3.18 W/mm). This work demonstrates that the novel gate fabrication process of shrinking gate head by using <inline-formula> <tex-math notation="LaTeX">$\mathrm { SiN_{x}}$ </tex-math></inline-formula> shield achieves high-frequency and high-output power characteristics for Ka-band application. |
|---|---|
| ISSN: | 2168-6734 |