Photoluminescence Properties of PECVD Si-C-N Films
Hard amorphous Si-C-N films with extremely low roughness were deposited on the silicon substrates by plasma enhanced chemical vapor deposition (PECVD) using hexamethyldisilazane (HMDS), hydrogen and nitrogen as the precursors mixture. It was investigated the photoluminescence and optical spectra of...
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| Format: | Article |
| Language: | English |
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Sumy State University
2017-04-01
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| Series: | Журнал нано- та електронної фізики |
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| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2017/2/articles/jnep_V9_02022.pdf |
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| author | O.K. Porada V.S. Manzhara A.O. Kozak V.I. Ivashchenko L.A. Ivashchenko |
| author_facet | O.K. Porada V.S. Manzhara A.O. Kozak V.I. Ivashchenko L.A. Ivashchenko |
| author_sort | O.K. Porada |
| collection | DOAJ |
| description | Hard amorphous Si-C-N films with extremely low roughness were deposited on the silicon substrates by plasma enhanced chemical vapor deposition (PECVD) using hexamethyldisilazane (HMDS), hydrogen and nitrogen as the precursors mixture. It was investigated the photoluminescence and optical spectra of the obtained films and their hardness at different bias voltages Ud on the substrates (– 5 to – 250W). To interpret the properties of films we have studied their infrared absorption spectra. Photoluminescence spectra have two peaks and become lower in intensity and shifts to the low-energy region of the spectrum after increase of the negative bias voltage applied to the substrate higher than Ud – 100 V. It is assumed that this is due to the increasing number of Si-C bonds in the amorphous Si-C-N matrix and growth of the disorder amorphous structure of films with increasing voltage Ud, which follows from the analysis of the in-frared absorption spectra, optical spectra and results research of the hardness films. |
| format | Article |
| id | doaj-art-85b376982bae4dbd9c8c30887b9c0630 |
| institution | OA Journals |
| issn | 2077-6772 |
| language | English |
| publishDate | 2017-04-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-85b376982bae4dbd9c8c30887b9c06302025-08-20T02:08:57ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722017-04-019202022-102022-610.21272/jnep.9(2).02022Photoluminescence Properties of PECVD Si-C-N FilmsO.K. Porada0V.S. Manzhara1A.O. Kozak2V.I. Ivashchenko3L.A. Ivashchenko4Institute for Problems of Materials Sciences NAS of Ukraine, 3, Krzhyzhanovsky Str., 03142 Kyiv, UkraineInstitute of Physics NAS of Ukraine, 46, Nauki Ave., 03028 Kyiv, UkraineInstitute for Problems of Materials Sciences NAS of Ukraine, 3, Krzhyzhanovsky Str., 03142 Kyiv, UkraineInstitute for Problems of Materials Sciences NAS of Ukraine, 3, Krzhyzhanovsky Str., 03142 Kyiv, UkraineInstitute for Problems of Materials Sciences NAS of Ukraine, 3, Krzhyzhanovsky Str., 03142 Kyiv, UkraineHard amorphous Si-C-N films with extremely low roughness were deposited on the silicon substrates by plasma enhanced chemical vapor deposition (PECVD) using hexamethyldisilazane (HMDS), hydrogen and nitrogen as the precursors mixture. It was investigated the photoluminescence and optical spectra of the obtained films and their hardness at different bias voltages Ud on the substrates (– 5 to – 250W). To interpret the properties of films we have studied their infrared absorption spectra. Photoluminescence spectra have two peaks and become lower in intensity and shifts to the low-energy region of the spectrum after increase of the negative bias voltage applied to the substrate higher than Ud – 100 V. It is assumed that this is due to the increasing number of Si-C bonds in the amorphous Si-C-N matrix and growth of the disorder amorphous structure of films with increasing voltage Ud, which follows from the analysis of the in-frared absorption spectra, optical spectra and results research of the hardness films.http://jnep.sumdu.edu.ua/download/numbers/2017/2/articles/jnep_V9_02022.pdfPhotoluminescencePECVDHexamethyldisilazaneSi-C-N filmsFTIROptical spectr |
| spellingShingle | O.K. Porada V.S. Manzhara A.O. Kozak V.I. Ivashchenko L.A. Ivashchenko Photoluminescence Properties of PECVD Si-C-N Films Журнал нано- та електронної фізики Photoluminescence PECVD Hexamethyldisilazane Si-C-N films FTIR Optical spectr |
| title | Photoluminescence Properties of PECVD Si-C-N Films |
| title_full | Photoluminescence Properties of PECVD Si-C-N Films |
| title_fullStr | Photoluminescence Properties of PECVD Si-C-N Films |
| title_full_unstemmed | Photoluminescence Properties of PECVD Si-C-N Films |
| title_short | Photoluminescence Properties of PECVD Si-C-N Films |
| title_sort | photoluminescence properties of pecvd si c n films |
| topic | Photoluminescence PECVD Hexamethyldisilazane Si-C-N films FTIR Optical spectr |
| url | http://jnep.sumdu.edu.ua/download/numbers/2017/2/articles/jnep_V9_02022.pdf |
| work_keys_str_mv | AT okporada photoluminescencepropertiesofpecvdsicnfilms AT vsmanzhara photoluminescencepropertiesofpecvdsicnfilms AT aokozak photoluminescencepropertiesofpecvdsicnfilms AT viivashchenko photoluminescencepropertiesofpecvdsicnfilms AT laivashchenko photoluminescencepropertiesofpecvdsicnfilms |