Low Temperature Characteristics of Ge-on-Si Waveguide Photodetectors: A Combined Simulation and Experimental Study

Low Temperature Characteristics of Ge-on-Si Waveguide Photodetectors: A Combined Simulation and Experimental Study

Benefiting from the progress of the germanium (Ge) epitaxy process on silicon (Si) substrates, waveguide-integrated Ge-on-Si photodetectors (PDs) have demonstrated decent performances in short-wave infrared (SWIR) detection. By lowering the operating temperature, theses PDs can meet the stringent si...

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Bibliographic Details
Main Authors: Jingchuan Liu, Zhenyu Li, Xiaofei Liu, Wentao Yan, Xingyan Zhao, Shaonan Zheng, Yang Qiu, Qize Zhong, Yuan Dong, Ting Hu
Format: Article
Language:English
Published: MDPI AG 2025-04-01
Series:Micromachines
Subjects:
Ge-on-Si photodetectors
short-wave infrared
absorption coefficients
low temperature
TCAD
Online Access:https://www.mdpi.com/2072-666X/16/5/542
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