Enhanced Ferroelectricity of Hf‐Based Memcapacitors by Adopting Ti Insert‐Layer and C–V Measurement for Constructing Energy‐Efficient Reservoir Computing Network

Enhanced Ferroelectricity of Hf‐Based Memcapacitors by Adopting Ti Insert‐Layer and C–V Measurement for Constructing Energy‐Efficient Reservoir Computing Network

Abstract Hf‐based ferroelectric memcapacitors only consume dynamic power with the merits of reliable nonvolatile storage and Si‐process compatibility, which is an outstanding artificial synapse for constructing energy‐efficient neuromorphic computing networks. In this paper, the ferroelectricity of...

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Bibliographic Details
Main Authors: Bo Chen, Yifang Wu, Yizhi Liu, Xiaopeng Li, Lu Tai, Pengpeng Sang, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen
Format: Article
Language:English
Published: Wiley-VCH 2025-04-01
Series:Advanced Electronic Materials
Subjects:
C–V measurement
HZO ferroelectric film
reservoir computing
Ti insertion layers
Online Access:https://doi.org/10.1002/aelm.202400395
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https://doi.org/10.1002/aelm.202400395

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