Investigating the effect of electrical and thermal transport properties on oxide-based memristors performance and reliability

Abstract Achieving reliable resistive switching in oxide-based memristive devices requires precise control over conductive filament (CF) formation and behavior, yet the fundamental relationship between oxide material properties and switching uniformity remains incompletely understood. Here, we devel...

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Bibliographic Details
Main Authors: Armin Gooran-Shoorakchaly, Sarah S. Sharif, Yaser M. Banad
Format: Article
Language:English
Published: Nature Portfolio 2025-05-01
Series:Scientific Reports
Subjects:
Online Access:https://doi.org/10.1038/s41598-025-02909-9
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