Enhanced hgte quantum dots/silicon heterojunction mwir photodetector with porous contact surface
In recent years, HgTe quantum dot-based infrared (IR) photodetectors have been intensively investigated in various fields due to their excellent optical properties such as size-tunable absorption and are considered a cost-effective alternative for the devices fabricated by epitaxy process. In this s...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-09-01
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| Series: | e-Prime: Advances in Electrical Engineering, Electronics and Energy |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772671125001949 |
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| Summary: | In recent years, HgTe quantum dot-based infrared (IR) photodetectors have been intensively investigated in various fields due to their excellent optical properties such as size-tunable absorption and are considered a cost-effective alternative for the devices fabricated by epitaxy process. In this study, we present a photodetector based on HgTe quantum dots/silicon heterojunction, designed for the visible to mid-infrared range. The p-type Si substrate shows a good rectifying behavior with HgTe quantum dots that are naturally from n-type. The considerable difference in electron affinity between Si and HgTe quantum dots leads to a built-in electric field at the heterojunction interface, which enhances the drift of photo-generated electrons under illumination. Making pores in the upper electrode decreases reflection and increases spectral photoresponsivity compared to the planar photodetectors. The structure responsivity and EQE are obtained as 260 mA/W, 20.5 % in SWIR region and 230mA/W, 7.6 % in MWIR region in planar structure. These values are increased to 420 mA/W, 31.9 % in SWIR region and 390 mA/V, 12.6 % for MWIR radiations for device with porous surface. The results are in good agreement with the data obtained from experimental studies. Si-compatibility, low cost, size tunable absorption and large efficiency of the presented device can open a new doorway to MWIR photodetectors. |
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| ISSN: | 2772-6711 |