Enhanced hgte quantum dots/silicon heterojunction mwir photodetector with porous contact surface
In recent years, HgTe quantum dot-based infrared (IR) photodetectors have been intensively investigated in various fields due to their excellent optical properties such as size-tunable absorption and are considered a cost-effective alternative for the devices fabricated by epitaxy process. In this s...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-09-01
|
| Series: | e-Prime: Advances in Electrical Engineering, Electronics and Energy |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772671125001949 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|