A Neural Network Approach for Parameterizations of Hot Carrier Degradation Models
This study develops a parameter extraction flow for Hot Carrier Degradation (HCD) model in advanced technology based on the neural network (NN). Four types of parameters of the BSIM-CMG model are proposed to comprehensively capture the aged device characteristics. As verified by 16/14 nm FinFET data...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10749970/ |
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