Wafer Bonding of GaAs and SiC via Thin Au Film at Room Temperature
Effective thermal management is a critical challenge in achieving high-power output for semiconductor laser devices. A key factor in laser device packaging is the bonding between the laser device on a GaAs substrate and a heat spreader, typically composed of high thermal conductivity materials such...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-04-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/16/4/439 |
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