Investigating the Impact of Sensor Layout on Radiation Hardness in 25 µm Pitch Hybrid Pixel Detectors for 4th Generation Synchrotron Light Sources

With the evolution of synchrotron light sources to fourth generation (diffraction-limited storage rings), the brilliance is increased by several orders of magnitude compared to third generation facilities. For example, the Swiss Light Source (SLS) has been upgraded to SLS 2.0, promising a horizontal...

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Main Authors: Julian Heymes, Filippo Baruffaldi, Anna Bergamaschi, Martin Brückner, Maria Carulla, Roberto Dinapoli, Simon Ebner, Khalil Ferjaoui, Erik Fröjdh, Viveka Gautam, Dominic Greiffenberg, Shqipe Hasanaj, Viktoria Hinger, Thomas King, Pawel Kozłowski, Shuqi Li, Carlos Lopez-Cuenca, Alice Mazzoleni, Davide Mezza, Konstantinos Moustakas, Aldo Mozzanica, Martin Müller, Jonathan Mulvey, Jan Navrátil, Kirsty A. Paton, Christian Ruder, Bernd Schmitt, Patrick Sieberer, Dhanya Thattil, Xiangyu Xie, Jiaguo Zhang
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Language:English
Published: MDPI AG 2025-05-01
Series:Sensors
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Online Access:https://www.mdpi.com/1424-8220/25/11/3383
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author Julian Heymes
Filippo Baruffaldi
Anna Bergamaschi
Martin Brückner
Maria Carulla
Roberto Dinapoli
Simon Ebner
Khalil Ferjaoui
Erik Fröjdh
Viveka Gautam
Dominic Greiffenberg
Shqipe Hasanaj
Viktoria Hinger
Thomas King
Pawel Kozłowski
Shuqi Li
Carlos Lopez-Cuenca
Alice Mazzoleni
Davide Mezza
Konstantinos Moustakas
Aldo Mozzanica
Martin Müller
Jonathan Mulvey
Jan Navrátil
Kirsty A. Paton
Christian Ruder
Bernd Schmitt
Patrick Sieberer
Dhanya Thattil
Xiangyu Xie
Jiaguo Zhang
author_facet Julian Heymes
Filippo Baruffaldi
Anna Bergamaschi
Martin Brückner
Maria Carulla
Roberto Dinapoli
Simon Ebner
Khalil Ferjaoui
Erik Fröjdh
Viveka Gautam
Dominic Greiffenberg
Shqipe Hasanaj
Viktoria Hinger
Thomas King
Pawel Kozłowski
Shuqi Li
Carlos Lopez-Cuenca
Alice Mazzoleni
Davide Mezza
Konstantinos Moustakas
Aldo Mozzanica
Martin Müller
Jonathan Mulvey
Jan Navrátil
Kirsty A. Paton
Christian Ruder
Bernd Schmitt
Patrick Sieberer
Dhanya Thattil
Xiangyu Xie
Jiaguo Zhang
author_sort Julian Heymes
collection DOAJ
description With the evolution of synchrotron light sources to fourth generation (diffraction-limited storage rings), the brilliance is increased by several orders of magnitude compared to third generation facilities. For example, the Swiss Light Source (SLS) has been upgraded to SLS 2.0, promising a horizontal emittance reduced by a factor of 40, and a brilliance up to two orders of magnitude (three at higher energies). A key challenge arising from the increased flux is the heightened accumulated dose in silicon sensors, which leads to a significant increase in radiation damage. This translates into an increase of both noise and dark current, as well as a reduction in the dynamic range for long exposure times, thus affecting the performance of the detector, in particular, for charge-integrating detectors. We have designed sensors with a 4 × 4 mm<sup>2</sup> pixel array featuring 16 design variations of 25 µm pitch pixels with different implant and metal sizes and tested them bump-bonded to MÖNCH 0.3, a charge integrating hybrid pixel detector readout ASIC. Following a first assessment of the functionality and performance of the different pixel designs, the assembly has been irradiated with X-rays. The variation in the tested parameters was characterized at different accumulated doses up to 100 kGy at the sensor entrance window side. The annealing dynamics at room temperature have also been measured. The results show that the default pixel design is currently not optimal and can benefit from layout changes (reduction in the inter-pixel gap area with full metal coverage of the implant). Further studies on the metal coverage over large implants could be conducted. The layout changes are, however, not sufficient for future full-sized sensors, requiring improved radiation hardness and long-term stability, and additional strategies such as focusing on detector cooling and changes in sensor technologies would be required.
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spelling doaj-art-83f1e4b58b9549e8ba610bdbfa756d1d2025-08-20T02:33:06ZengMDPI AGSensors1424-82202025-05-012511338310.3390/s25113383Investigating the Impact of Sensor Layout on Radiation Hardness in 25 µm Pitch Hybrid Pixel Detectors for 4th Generation Synchrotron Light SourcesJulian Heymes0Filippo Baruffaldi1Anna Bergamaschi2Martin Brückner3Maria Carulla4Roberto Dinapoli5Simon Ebner6Khalil Ferjaoui7Erik Fröjdh8Viveka Gautam9Dominic Greiffenberg10Shqipe Hasanaj11Viktoria Hinger12Thomas King13Pawel Kozłowski14Shuqi Li15Carlos Lopez-Cuenca16Alice Mazzoleni17Davide Mezza18Konstantinos Moustakas19Aldo Mozzanica20Martin Müller21Jonathan Mulvey22Jan Navrátil23Kirsty A. Paton24Christian Ruder25Bernd Schmitt26Patrick Sieberer27Dhanya Thattil28Xiangyu Xie29Jiaguo Zhang30Paul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandPaul Scherrer Institut, Forschungsstrasse 111, 5232 Villigen, SwitzerlandWith the evolution of synchrotron light sources to fourth generation (diffraction-limited storage rings), the brilliance is increased by several orders of magnitude compared to third generation facilities. For example, the Swiss Light Source (SLS) has been upgraded to SLS 2.0, promising a horizontal emittance reduced by a factor of 40, and a brilliance up to two orders of magnitude (three at higher energies). A key challenge arising from the increased flux is the heightened accumulated dose in silicon sensors, which leads to a significant increase in radiation damage. This translates into an increase of both noise and dark current, as well as a reduction in the dynamic range for long exposure times, thus affecting the performance of the detector, in particular, for charge-integrating detectors. We have designed sensors with a 4 × 4 mm<sup>2</sup> pixel array featuring 16 design variations of 25 µm pitch pixels with different implant and metal sizes and tested them bump-bonded to MÖNCH 0.3, a charge integrating hybrid pixel detector readout ASIC. Following a first assessment of the functionality and performance of the different pixel designs, the assembly has been irradiated with X-rays. The variation in the tested parameters was characterized at different accumulated doses up to 100 kGy at the sensor entrance window side. The annealing dynamics at room temperature have also been measured. The results show that the default pixel design is currently not optimal and can benefit from layout changes (reduction in the inter-pixel gap area with full metal coverage of the implant). Further studies on the metal coverage over large implants could be conducted. The layout changes are, however, not sufficient for future full-sized sensors, requiring improved radiation hardness and long-term stability, and additional strategies such as focusing on detector cooling and changes in sensor technologies would be required.https://www.mdpi.com/1424-8220/25/11/3383hybrid pixel detectorspixel sensor designradiation hardnessirradiationX-ray detectorsensor layout
spellingShingle Julian Heymes
Filippo Baruffaldi
Anna Bergamaschi
Martin Brückner
Maria Carulla
Roberto Dinapoli
Simon Ebner
Khalil Ferjaoui
Erik Fröjdh
Viveka Gautam
Dominic Greiffenberg
Shqipe Hasanaj
Viktoria Hinger
Thomas King
Pawel Kozłowski
Shuqi Li
Carlos Lopez-Cuenca
Alice Mazzoleni
Davide Mezza
Konstantinos Moustakas
Aldo Mozzanica
Martin Müller
Jonathan Mulvey
Jan Navrátil
Kirsty A. Paton
Christian Ruder
Bernd Schmitt
Patrick Sieberer
Dhanya Thattil
Xiangyu Xie
Jiaguo Zhang
Investigating the Impact of Sensor Layout on Radiation Hardness in 25 µm Pitch Hybrid Pixel Detectors for 4th Generation Synchrotron Light Sources
Sensors
hybrid pixel detectors
pixel sensor design
radiation hardness
irradiation
X-ray detector
sensor layout
title Investigating the Impact of Sensor Layout on Radiation Hardness in 25 µm Pitch Hybrid Pixel Detectors for 4th Generation Synchrotron Light Sources
title_full Investigating the Impact of Sensor Layout on Radiation Hardness in 25 µm Pitch Hybrid Pixel Detectors for 4th Generation Synchrotron Light Sources
title_fullStr Investigating the Impact of Sensor Layout on Radiation Hardness in 25 µm Pitch Hybrid Pixel Detectors for 4th Generation Synchrotron Light Sources
title_full_unstemmed Investigating the Impact of Sensor Layout on Radiation Hardness in 25 µm Pitch Hybrid Pixel Detectors for 4th Generation Synchrotron Light Sources
title_short Investigating the Impact of Sensor Layout on Radiation Hardness in 25 µm Pitch Hybrid Pixel Detectors for 4th Generation Synchrotron Light Sources
title_sort investigating the impact of sensor layout on radiation hardness in 25 µm pitch hybrid pixel detectors for 4th generation synchrotron light sources
topic hybrid pixel detectors
pixel sensor design
radiation hardness
irradiation
X-ray detector
sensor layout
url https://www.mdpi.com/1424-8220/25/11/3383
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