Formation of shallow-acceptor defects in Li-irradiated N-type silicon
Point-defect-based n -type doping has been applied in power devices, whereas shallow-acceptor defects has remained unexplored in Si. We demonstrate a shallow-acceptor defect formation in Si by means of lithium-ion irradiation and thermal annealing. Comparative studies with hydrogen, helium and lithi...
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| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
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| Online Access: | https://doi.org/10.35848/1882-0786/ada7c1 |
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| author | Akira Kiyoi Naoyuki Kawabata |
| author_facet | Akira Kiyoi Naoyuki Kawabata |
| author_sort | Akira Kiyoi |
| collection | DOAJ |
| description | Point-defect-based n -type doping has been applied in power devices, whereas shallow-acceptor defects has remained unexplored in Si. We demonstrate a shallow-acceptor defect formation in Si by means of lithium-ion irradiation and thermal annealing. Comparative studies with hydrogen, helium and lithium irradiations revealed that the p -type conductivity primarily attributed to a combination of intrinsic defects and lithium-related defect complexes, stable up to 500 °C. This approach potentially addresses a limitation in the versatile application of light ion irradiation techniques, particularly for achieving p -type conductivity and is beneficial on device fabrications such as in the context of a low temperature activation. |
| format | Article |
| id | doaj-art-82f0dfd7dc3a49b59d3bd264b9e4136a |
| institution | Kabale University |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-82f0dfd7dc3a49b59d3bd264b9e4136a2025-01-22T04:37:05ZengIOP PublishingApplied Physics Express1882-07862025-01-0118101100210.35848/1882-0786/ada7c1Formation of shallow-acceptor defects in Li-irradiated N-type siliconAkira Kiyoi0Naoyuki Kawabata1Advanced Technology R&D Center , Mitsubishi Electric Corporation, Amagasaki 661-8661, Hyogo, JapanAdvanced Technology R&D Center , Mitsubishi Electric Corporation, Amagasaki 661-8661, Hyogo, JapanPoint-defect-based n -type doping has been applied in power devices, whereas shallow-acceptor defects has remained unexplored in Si. We demonstrate a shallow-acceptor defect formation in Si by means of lithium-ion irradiation and thermal annealing. Comparative studies with hydrogen, helium and lithium irradiations revealed that the p -type conductivity primarily attributed to a combination of intrinsic defects and lithium-related defect complexes, stable up to 500 °C. This approach potentially addresses a limitation in the versatile application of light ion irradiation techniques, particularly for achieving p -type conductivity and is beneficial on device fabrications such as in the context of a low temperature activation.https://doi.org/10.35848/1882-0786/ada7c1defectsilicondopinglithium |
| spellingShingle | Akira Kiyoi Naoyuki Kawabata Formation of shallow-acceptor defects in Li-irradiated N-type silicon Applied Physics Express defect silicon doping lithium |
| title | Formation of shallow-acceptor defects in Li-irradiated N-type silicon |
| title_full | Formation of shallow-acceptor defects in Li-irradiated N-type silicon |
| title_fullStr | Formation of shallow-acceptor defects in Li-irradiated N-type silicon |
| title_full_unstemmed | Formation of shallow-acceptor defects in Li-irradiated N-type silicon |
| title_short | Formation of shallow-acceptor defects in Li-irradiated N-type silicon |
| title_sort | formation of shallow acceptor defects in li irradiated n type silicon |
| topic | defect silicon doping lithium |
| url | https://doi.org/10.35848/1882-0786/ada7c1 |
| work_keys_str_mv | AT akirakiyoi formationofshallowacceptordefectsinliirradiatedntypesilicon AT naoyukikawabata formationofshallowacceptordefectsinliirradiatedntypesilicon |