Formation of shallow-acceptor defects in Li-irradiated N-type silicon
Point-defect-based n -type doping has been applied in power devices, whereas shallow-acceptor defects has remained unexplored in Si. We demonstrate a shallow-acceptor defect formation in Si by means of lithium-ion irradiation and thermal annealing. Comparative studies with hydrogen, helium and lithi...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/ada7c1 |
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| Summary: | Point-defect-based n -type doping has been applied in power devices, whereas shallow-acceptor defects has remained unexplored in Si. We demonstrate a shallow-acceptor defect formation in Si by means of lithium-ion irradiation and thermal annealing. Comparative studies with hydrogen, helium and lithium irradiations revealed that the p -type conductivity primarily attributed to a combination of intrinsic defects and lithium-related defect complexes, stable up to 500 °C. This approach potentially addresses a limitation in the versatile application of light ion irradiation techniques, particularly for achieving p -type conductivity and is beneficial on device fabrications such as in the context of a low temperature activation. |
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| ISSN: | 1882-0786 |