Modeling of Electron Mobility of GaN at Low Temperature and Low Electric Field

Modeling of Electron Mobility of GaN at Low Temperature and Low Electric Field

An analytical model at low temperature and low field electron mobility of GaN has been developed. The electron mobility in GaN have been calculated using Relaxation Time Approximation method considering elastic process of acoustic phonon deformation potential scattering, acoustic piezoelectric scatt...

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Bibliographic Details
Main Authors: Souradeep Chakrabarti, Shyamasree Gupta Chatterjee, Somnath Chatterjee
Format: Article
Language:English
Published: Sumy State University 2011-01-01
Series:Журнал нано- та електронної фізики
Subjects:
Modeling of electron mobility
M-B statistics
Degeneracy
Low temperature (2)
Elastic scatterings
Acoustic phonon deformation potential
Acoustic phonon piezoelectric
Ionized impurity
Dislocation scattering
Neutral impurity.
Online Access:http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_1071-1080.pdf
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http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_1071-1080.pdf

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