Permanent Strain Engineering of Molybdenum Disulfide Using Laser-Driven Stressors for Energy-Efficient Resistive Switching Memory Devices

Permanent Strain Engineering of Molybdenum Disulfide Using Laser-Driven Stressors for Energy-Efficient Resistive Switching Memory Devices

Strain engineering provides an attractive approach to enhance device performance by modulating the intrinsic electrical properties of materials. This is especially applicable to 2D materials, which exhibit high sensitivity to mechanical stress. However, conventional methods, such as using polymer su...

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Bibliographic Details
Main Authors: Heeyoon Jang, Seok-Ki Hyeong, Byeongjin Park, Tae-Wook Kim, Sukang Bae, Sung Kyu Jang, Yonghun Kim, Seoung-Ki Lee
Format: Article
Language:English
Published: MDPI AG 2024-11-01
Series:Nanomaterials
Subjects:
molybdenum disulfide
strain engineering
stressor
ReRAM
low power operation
Online Access:https://www.mdpi.com/2079-4991/14/23/1872
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