DFT Study of Initial Surface Reactions in Gallium Nitride Atomic Layer Deposition Using Trimethylgallium and Ammonia

DFT Study of Initial Surface Reactions in Gallium Nitride Atomic Layer Deposition Using Trimethylgallium and Ammonia

The initial surface reaction of gallium nitride (GaN) grown by atomic layer deposition (GaN-ALD) was investigated using density functional theory (DFT) calculations. Trimethylgallium (TMG) and ammonia (NH<sub>3</sub>) were used as gallium (Ga) and nitrogen (N) precursors, respectively. D...

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Bibliographic Details
Main Authors: P. Pungboon Pansila, Seckson Sukhasena, Saksit Sukprasong, Worasitti Sriboon, Wipawee Temnuch, Tongsai Jamnongkan, Tanabat Promjun
Format: Article
Language:English
Published: MDPI AG 2025-07-01
Series:Applied Sciences
Subjects:
gallium nitride
thin film
atomic layer deposition
semiconductor
DFT
Online Access:https://www.mdpi.com/2076-3417/15/13/7487
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