Analysis of channel length-dependent degradation of IGZO TFTs under positive bias stress through TCAD simulation
This paper investigated the degradation mechanism of InGaZnO (IGZO) thin-film transistors (TFTs) that depend on channel length under positive bias stress (PBS). Although the further degradation of short-channel IGZO TFTs has been previously reported, it has yet to be fully understood. Using technolo...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2025-05-01
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| Series: | Journal of Information Display |
| Subjects: | |
| Online Access: | https://www.tandfonline.com/doi/10.1080/15980316.2025.2463356 |
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