APA (7th ed.) Citation

Belorusov, D. A., Goldman, E. I., Chucheva, G. V., Afanasyev, M. S., Pilipenko, V. A., & Semchenko, A. V. Passivation of substrates with hydrogen to reduce the number of electron traps in the buffer layer at the contact of silicon with Ba1-xSrxTiO3. Pensoft Publishers.

Chicago Style (17th ed.) Citation

Belorusov, Dmitry A., Evgeniy I. Goldman, Galina V. Chucheva, Mikhail S. Afanasyev, Vladimir A. Pilipenko, and Alina V. Semchenko. Passivation of Substrates with Hydrogen to Reduce the Number of Electron Traps in the Buffer Layer at the Contact of Silicon with Ba1-xSrxTiO3. Pensoft Publishers.

MLA (9th ed.) Citation

Belorusov, Dmitry A., et al. Passivation of Substrates with Hydrogen to Reduce the Number of Electron Traps in the Buffer Layer at the Contact of Silicon with Ba1-xSrxTiO3. Pensoft Publishers.