Passivation of substrates with hydrogen to reduce the number of electron traps in the buffer layer at the contact of silicon with Ba1-xSrxTiO3
The performance of FeRAM non-volatile cells including those on ferroelectric insulating layers requires full-scale development of the field effect at the semiconductor–dielectric interface. The recharging of electron traps concentrated in the buffer layer between the insulator and the wafer impedes...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Pensoft Publishers
2024-12-01
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| Series: | Modern Electronic Materials |
| Online Access: | https://moem.pensoft.net/article/143751/download/pdf/ |
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