Hydrogenation and etching of single-layer graphene during exposure to atomic hydrogen

Hydrogenation and etching of single-layer graphene during exposure to atomic hydrogen

Opening a band gap in graphene is essential for its integration into electronic devices, but remains a major challenge. Hydrogenation offers a promising route, though the process is complicated by competing mechanisms such as hydrogen desorption and unwanted etching. Here, we investigate one-sided h...

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Bibliographic Details
Main Authors: Tom Fournier, Samir El Masaoudi, Iann C. Gerber, Benjamin Lassagne, Cedric Crespos, Jean-Marc Leyssale, Kelvin Cruz, Germercy Paredes, Felana Andriambelaza, Marc Monthioux, Pascal Puech, Fabrice Piazza
Format: Article
Language:English
Published: Elsevier 2025-08-01
Series:Carbon Trends
Subjects:
Graphene
Hydrogenation
Dehydrogenation
Etching
Raman
Band gap
Online Access:http://www.sciencedirect.com/science/article/pii/S2667056925001038
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http://www.sciencedirect.com/science/article/pii/S2667056925001038

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