Properties of Bilayer Zr- and Sm-Oxide Gate Dielectric on 4H-SiC Substrate Under Varying Nitrogen and Oxygen Concentrations

Properties of Bilayer Zr- and Sm-Oxide Gate Dielectric on 4H-SiC Substrate Under Varying Nitrogen and Oxygen Concentrations

This work systematically analyses the electrical and structural properties of a bilayer gate dielectric composed of Sm<sub>2</sub>O<sub>3</sub> and ZrO<sub>2</sub> on a 4H-SiC substrate. The bilayer thin film was fabricated using a sputtering process, followed by...

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Bibliographic Details
Main Authors: Ahmad Hafiz Jafarul Tarek, Tahsin Ahmed Mozaffor Onik, Chin Wei Lai, Bushroa Abdul Razak, Chia Ching Kee, Yew Hoong Wong
Format: Article
Language:English
Published: MDPI AG 2025-05-01
Series:Ceramics
Subjects:
sputtering
samarium oxide
silicon carbide
rare-earth oxide
gate dielectric
Online Access:https://www.mdpi.com/2571-6131/8/2/49
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