PECVD SixCy as Barrier Layer Against Aluminum in Solar Cells With poly-Si/SiOx Passivating Contacts

PECVD SixCy as Barrier Layer Against Aluminum in Solar Cells With poly-Si/SiOx Passivating Contacts

We investigate the barrier properties of phosphorus-doped Si-rich silicon carbide (SixCy) thin films deposited by PECVD against Al/Si alloying in the context of poly-Si/SiOx passivating contacts. The stability of the implied open circuit voltage (iVOC) after firing of single-sided, full area screen...

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Bibliographic Details
Main Authors: David Bäurle, Benjamin Gapp, Giso Hahn, Heiko Plagwitz, Barbara Terheiden
Format: Article
Language:English
Published: TIB Open Publishing 2024-12-01
Series:SiliconPV Conference Proceedings
Subjects:
Passivating Contacts
Metallization
Aluminum
Silicon Carbide
Online Access:https://www.tib-op.org/ojs/index.php/siliconpv/article/view/1291
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https://www.tib-op.org/ojs/index.php/siliconpv/article/view/1291

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