The Spectral Sensitivity Characteristics Simulation of the Silicon p-i-n-structure with High Resistance

The Spectral Sensitivity Characteristics Simulation of the Silicon p-i-n-structure with High Resistance

In the paper a simulation program for photovoltaic parameters of semiconductor devices and results of their investigation are presented. The results of the program usage based on an example of calculating the influence of the high-resistance "well" thickness in the silicon p-i-n-diode spec...

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Bibliographic Details
Main Authors: S.A. Legotin, V.N. Murashev, S.Yu. Yurchuk, V.P. Yaromskiy, V.P. Astahov, K.A. Kuz’mina, O.I. Rabinovich, D.S. El’nikov, U.V. Osipov, A.A. Krasnov, S.I. Didenko
Format: Article
Language:English
Published: Sumy State University 2015-12-01
Series:Журнал нано- та електронної фізики
Subjects:
Silicon p-i-n structure
Design optimizatio
Online Access:http://jnep.sumdu.edu.ua/download/numbers/2015/4/articles/jnep_2015_V7_04017.pdf
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http://jnep.sumdu.edu.ua/download/numbers/2015/4/articles/jnep_2015_V7_04017.pdf

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