Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled pMOSFETs
We examine the impact of negative bias temperature (NBT) stress on the fluctuations in ID and IG for deeply scaled pMOSFETs and find that the relative high NBT stress triggers IG-RTN and ID-step. Through the analysis of the field dependence of emission constant and the carrier separation measurement...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2015-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2015/508610 |
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