Round and pleated blisters: interface delamination in thin film deposition
Electron beam deposition is widely used in microelectronics manufacturing due to its ability to fabricate high-purity thin films at elevated rates. However, the formation of blisters during this process – resulting from delamination between the film and substrate – can compromise film integrity and...
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Taylor & Francis Group
2025-04-01
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| Series: | International Journal of Smart and Nano Materials |
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| Online Access: | https://www.tandfonline.com/doi/10.1080/19475411.2025.2493663 |
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| author | Wenxiang Wang Shengyao Chen Jiacong Cao Xiaoding Wei Zhaohe Dai |
| author_facet | Wenxiang Wang Shengyao Chen Jiacong Cao Xiaoding Wei Zhaohe Dai |
| author_sort | Wenxiang Wang |
| collection | DOAJ |
| description | Electron beam deposition is widely used in microelectronics manufacturing due to its ability to fabricate high-purity thin films at elevated rates. However, the formation of blisters during this process – resulting from delamination between the film and substrate – can compromise film integrity and adversely affect device performance. This study investigates the mechanisms behind blister formation during the deposition of gold/titanium (Au/Ti) films on SiO2/Si substrates with a polymethyl methacrylate (PMMA) layer, a common configuration in electronics. Two distinct types of blisters are identified: round blisters and pleated blisters. Elemental analysis and in situ heating experiments revealed that round blisters originate from delamination at the Au-Ti-PMMA/SiO₂ interface, while pleated blisters result from delamination between the Au-Ti film and the PMMA layer. We provide a mechanics model that can quantify the energy required to delaminate the film-substrate interface and the strain within the blister regions. The results offer valuable perspectives on both the fabrication of thin films and the potential application of strain engineering, where controlled blistering may enhance the functional performance of thin films for use in advanced microelectronics. |
| format | Article |
| id | doaj-art-7cce2f6002334a9db56e6840140430fc |
| institution | Kabale University |
| issn | 1947-5411 1947-542X |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | International Journal of Smart and Nano Materials |
| spelling | doaj-art-7cce2f6002334a9db56e6840140430fc2025-08-20T03:24:36ZengTaylor & Francis GroupInternational Journal of Smart and Nano Materials1947-54111947-542X2025-04-0116234335810.1080/19475411.2025.2493663Round and pleated blisters: interface delamination in thin film depositionWenxiang Wang0Shengyao Chen1Jiacong Cao2Xiaoding Wei3Zhaohe Dai4Department of Mechanics and Engineering Science, State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing, ChinaCAS Key Laboratory of Nanosystem and Hierarchical Fabrication, Nanofabrication Laboratory, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, ChinaDepartment of Mechanics and Engineering Science, State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing, ChinaDepartment of Mechanics and Engineering Science, State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing, ChinaDepartment of Mechanics and Engineering Science, State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing, ChinaElectron beam deposition is widely used in microelectronics manufacturing due to its ability to fabricate high-purity thin films at elevated rates. However, the formation of blisters during this process – resulting from delamination between the film and substrate – can compromise film integrity and adversely affect device performance. This study investigates the mechanisms behind blister formation during the deposition of gold/titanium (Au/Ti) films on SiO2/Si substrates with a polymethyl methacrylate (PMMA) layer, a common configuration in electronics. Two distinct types of blisters are identified: round blisters and pleated blisters. Elemental analysis and in situ heating experiments revealed that round blisters originate from delamination at the Au-Ti-PMMA/SiO₂ interface, while pleated blisters result from delamination between the Au-Ti film and the PMMA layer. We provide a mechanics model that can quantify the energy required to delaminate the film-substrate interface and the strain within the blister regions. The results offer valuable perspectives on both the fabrication of thin films and the potential application of strain engineering, where controlled blistering may enhance the functional performance of thin films for use in advanced microelectronics.https://www.tandfonline.com/doi/10.1080/19475411.2025.2493663Electron beam depositionheterojunctionsblisterswrinklinginterface delamination |
| spellingShingle | Wenxiang Wang Shengyao Chen Jiacong Cao Xiaoding Wei Zhaohe Dai Round and pleated blisters: interface delamination in thin film deposition International Journal of Smart and Nano Materials Electron beam deposition heterojunctions blisters wrinkling interface delamination |
| title | Round and pleated blisters: interface delamination in thin film deposition |
| title_full | Round and pleated blisters: interface delamination in thin film deposition |
| title_fullStr | Round and pleated blisters: interface delamination in thin film deposition |
| title_full_unstemmed | Round and pleated blisters: interface delamination in thin film deposition |
| title_short | Round and pleated blisters: interface delamination in thin film deposition |
| title_sort | round and pleated blisters interface delamination in thin film deposition |
| topic | Electron beam deposition heterojunctions blisters wrinkling interface delamination |
| url | https://www.tandfonline.com/doi/10.1080/19475411.2025.2493663 |
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