Research on the Short-Circuit Characteristics of Trench-Type SiC Power MOSFETs Under Single and Repetitive Pulse Strikes
This paper investigates the short-circuit characteristics of 1.2 kV symmetrical and asymmetrical trench-gate SiC MOSFETs. Based on the self-designed short-circuit test platform, single and repetitive short-circuit tests were carried out to characterize the short-circuit capability of the devices und...
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MDPI AG
2025-06-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/16/7/768 |
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| author | Li Liu Bo Pang Siqiao Li Yulu Zhen Gangpeng Li |
| author_facet | Li Liu Bo Pang Siqiao Li Yulu Zhen Gangpeng Li |
| author_sort | Li Liu |
| collection | DOAJ |
| description | This paper investigates the short-circuit characteristics of 1.2 kV symmetrical and asymmetrical trench-gate SiC MOSFETs. Based on the self-designed short-circuit test platform, single and repetitive short-circuit tests were carried out to characterize the short-circuit capability of the devices under different electrical stresses through the short-circuit withstanding time (SCWT). Notably, the asymmetric trench structure exhibited a superior short-circuit capability under identical test conditions, achieving a longer SCWT compared to its symmetrical counterpart. Moreover, TCAD was used to model the two devices and fit the short-circuit current waveforms to study the difference in short-circuit characteristics under different conditions. For the degradation of the devices after repetitive short-circuit stresses, repetitive short-circuit pulse experiments were conducted for the two groove structures separately. The asymmetric trench devices show a positive Vth drift, increasing on-resistance, increasing C<sub>gs</sub> and C<sub>ds</sub>, and decreasing C<sub>gd</sub>, while the symmetric trench devices show a negative Vth drift, decreasing on-resistance, and inverse variation in capacitance parameters. Both blocking voltages are degraded, but the gate-source leakage current remains low, indicating that the gate oxide has not yet been damaged. |
| format | Article |
| id | doaj-art-7c4ca4d311c84bbbb9832a75416820b2 |
| institution | DOAJ |
| issn | 2072-666X |
| language | English |
| publishDate | 2025-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj-art-7c4ca4d311c84bbbb9832a75416820b22025-08-20T03:08:10ZengMDPI AGMicromachines2072-666X2025-06-0116776810.3390/mi16070768Research on the Short-Circuit Characteristics of Trench-Type SiC Power MOSFETs Under Single and Repetitive Pulse StrikesLi Liu0Bo Pang1Siqiao Li2Yulu Zhen3Gangpeng Li4State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinaGuangzhou Institute of Technology, Xidian University, Guangzhou 510555, ChinaGuangzhou Institute of Technology, Xidian University, Guangzhou 510555, ChinaGuangzhou Institute of Technology, Xidian University, Guangzhou 510555, ChinaState Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinaThis paper investigates the short-circuit characteristics of 1.2 kV symmetrical and asymmetrical trench-gate SiC MOSFETs. Based on the self-designed short-circuit test platform, single and repetitive short-circuit tests were carried out to characterize the short-circuit capability of the devices under different electrical stresses through the short-circuit withstanding time (SCWT). Notably, the asymmetric trench structure exhibited a superior short-circuit capability under identical test conditions, achieving a longer SCWT compared to its symmetrical counterpart. Moreover, TCAD was used to model the two devices and fit the short-circuit current waveforms to study the difference in short-circuit characteristics under different conditions. For the degradation of the devices after repetitive short-circuit stresses, repetitive short-circuit pulse experiments were conducted for the two groove structures separately. The asymmetric trench devices show a positive Vth drift, increasing on-resistance, increasing C<sub>gs</sub> and C<sub>ds</sub>, and decreasing C<sub>gd</sub>, while the symmetric trench devices show a negative Vth drift, decreasing on-resistance, and inverse variation in capacitance parameters. Both blocking voltages are degraded, but the gate-source leakage current remains low, indicating that the gate oxide has not yet been damaged.https://www.mdpi.com/2072-666X/16/7/768SiC MOSFETstrench gateshort circuitdegradation |
| spellingShingle | Li Liu Bo Pang Siqiao Li Yulu Zhen Gangpeng Li Research on the Short-Circuit Characteristics of Trench-Type SiC Power MOSFETs Under Single and Repetitive Pulse Strikes Micromachines SiC MOSFETs trench gate short circuit degradation |
| title | Research on the Short-Circuit Characteristics of Trench-Type SiC Power MOSFETs Under Single and Repetitive Pulse Strikes |
| title_full | Research on the Short-Circuit Characteristics of Trench-Type SiC Power MOSFETs Under Single and Repetitive Pulse Strikes |
| title_fullStr | Research on the Short-Circuit Characteristics of Trench-Type SiC Power MOSFETs Under Single and Repetitive Pulse Strikes |
| title_full_unstemmed | Research on the Short-Circuit Characteristics of Trench-Type SiC Power MOSFETs Under Single and Repetitive Pulse Strikes |
| title_short | Research on the Short-Circuit Characteristics of Trench-Type SiC Power MOSFETs Under Single and Repetitive Pulse Strikes |
| title_sort | research on the short circuit characteristics of trench type sic power mosfets under single and repetitive pulse strikes |
| topic | SiC MOSFETs trench gate short circuit degradation |
| url | https://www.mdpi.com/2072-666X/16/7/768 |
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