Research on the Short-Circuit Characteristics of Trench-Type SiC Power MOSFETs Under Single and Repetitive Pulse Strikes
This paper investigates the short-circuit characteristics of 1.2 kV symmetrical and asymmetrical trench-gate SiC MOSFETs. Based on the self-designed short-circuit test platform, single and repetitive short-circuit tests were carried out to characterize the short-circuit capability of the devices und...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-06-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/16/7/768 |
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