Research on the Short-Circuit Characteristics of Trench-Type SiC Power MOSFETs Under Single and Repetitive Pulse Strikes
This paper investigates the short-circuit characteristics of 1.2 kV symmetrical and asymmetrical trench-gate SiC MOSFETs. Based on the self-designed short-circuit test platform, single and repetitive short-circuit tests were carried out to characterize the short-circuit capability of the devices und...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-06-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/16/7/768 |
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| Summary: | This paper investigates the short-circuit characteristics of 1.2 kV symmetrical and asymmetrical trench-gate SiC MOSFETs. Based on the self-designed short-circuit test platform, single and repetitive short-circuit tests were carried out to characterize the short-circuit capability of the devices under different electrical stresses through the short-circuit withstanding time (SCWT). Notably, the asymmetric trench structure exhibited a superior short-circuit capability under identical test conditions, achieving a longer SCWT compared to its symmetrical counterpart. Moreover, TCAD was used to model the two devices and fit the short-circuit current waveforms to study the difference in short-circuit characteristics under different conditions. For the degradation of the devices after repetitive short-circuit stresses, repetitive short-circuit pulse experiments were conducted for the two groove structures separately. The asymmetric trench devices show a positive Vth drift, increasing on-resistance, increasing C<sub>gs</sub> and C<sub>ds</sub>, and decreasing C<sub>gd</sub>, while the symmetric trench devices show a negative Vth drift, decreasing on-resistance, and inverse variation in capacitance parameters. Both blocking voltages are degraded, but the gate-source leakage current remains low, indicating that the gate oxide has not yet been damaged. |
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| ISSN: | 2072-666X |