Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing

We reviewed the formation of Ge nanowire heterostructure and its field-effect characteristics by a controlled reaction between a single-crystalline Ge nanowire and Ni contact pads using a facile rapid thermal annealing process. Scanning electron microscopy and transmission electron microscopy demons...

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Bibliographic Details
Main Authors: Jianshi Tang, Chiu-Yen Wang, Faxian Xiu, Yi Zhou, Lih-Juann Chen, Kang L. Wang
Format: Article
Language:English
Published: Wiley 2011-01-01
Series:Advances in Materials Science and Engineering
Online Access:http://dx.doi.org/10.1155/2011/316513
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