Impurity Band Formation as a Route to Thermoelectric Power Factor Enhancement in n‐type XNiSn Half‐Heuslers
Abstract Bandstructure engineering is a key route for thermoelectric performance enhancement. Here, 20–50% Seebeck (S) enhancement is reported for XNiCuySn half‐Heusler samples based on X = Ti. This novel electronic effect is attributed to the emergence of impurity bands of finite extent, due to the...
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| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-06-01
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| Series: | Advanced Physics Research |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/apxr.202400179 |
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