Impurity Band Formation as a Route to Thermoelectric Power Factor Enhancement in n‐type XNiSn Half‐Heuslers

Impurity Band Formation as a Route to Thermoelectric Power Factor Enhancement in n‐type XNiSn Half‐Heuslers

Abstract Bandstructure engineering is a key route for thermoelectric performance enhancement. Here, 20–50% Seebeck (S) enhancement is reported for XNiCuySn half‐Heusler samples based on X = Ti. This novel electronic effect is attributed to the emergence of impurity bands of finite extent, due to the...

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Bibliographic Details
Main Authors: Robert J. Quinn, Yuji Go, Aaron B. Naden, Andras Bojtor, Gabor Paráda, Ashiq K. M. A. Shawon, Kamil Domosud, Keith Refson, Alexandra Zevalkink, Neophytos Neophytou, Jan‐Willem G. Bos
Format: Article
Language:English
Published: Wiley-VCH 2025-06-01
Series:Advanced Physics Research
Subjects:
band engineering
half‐heusler thermoelectrics
impurity bands
Seebeck effect
TiNiSn
Online Access:https://doi.org/10.1002/apxr.202400179
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https://doi.org/10.1002/apxr.202400179

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