Modeling the Increase in Effective Mobility in Short-Channel Oxide Thin-Film Transistors
This paper investigates the dependence of effective carrier mobility on the channel length in oxide thin-film transistors (TFTs). Bottom-gate staggered TFTs fabricated with a sputtered indium-galliumzinc-oxide channel exhibit a substantial increase in field-effect mobility with decreasing channel le...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10948409/ |
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