Electronic Quality Enhancement of Multicrystalline Silicon via SiN<sub>x</sub> and H<sub>2</sub> Plasma Passivation Using Plasma-Enhanced Chemical Vapor Deposition for Photovoltaic Applications

Electronic Quality Enhancement of Multicrystalline Silicon via SiN<sub>x</sub> and H<sub>2</sub> Plasma Passivation Using Plasma-Enhanced Chemical Vapor Deposition for Photovoltaic Applications

This study explored advancements in photovoltaic technologies by enhancing the electronic quality of multicrystalline silicon (mc-Si) through silicon nitride (SiN<sub>x</sub>) and hydrogen (H<sub>2</sub>) plasma deposition via plasma-enhanced chemical vapor deposition (PECVD)...

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Bibliographic Details
Main Authors: Achref Mannai, Rabia Benabderrahmane Zaghouani, Karim Choubani, Mohammed A. Almeshaal, Mohamed Ben Rabha, Wissem Dimassi
Format: Article
Language:English
Published: MDPI AG 2025-05-01
Series:Crystals
Subjects:
multicrystalline silicon
PECVD-SiN<sub>x</sub>
PV technologies
effective lifetime
diffusion length
iron concentration
Online Access:https://www.mdpi.com/2073-4352/15/6/498
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Summary:This study explored advancements in photovoltaic technologies by enhancing the electronic quality of multicrystalline silicon (mc-Si) through silicon nitride (SiN<sub>x</sub>) and hydrogen (H<sub>2</sub>) plasma deposition via plasma-enhanced chemical vapor deposition (PECVD). This innovative approach replaced toxic chemical wet processes with H<sub>2</sub> plasma and SiN<sub>x</sub>. The key parameters of silicon solar cells, including the effective lifetime (τ<sub>eff</sub>), diffusion length (L<sub>diff</sub>), and iron concentration ([Fe]), were analyzed before and after this sustainable solution. The results show significant improvements, particularly in the edge region, which initially exhibited a low τ<sub>eff</sub> and a high iron concentration. After the treatment, the τ<sub>eff</sub> and L<sub>diff</sub> increased to 7 μs and 210 μm, respectively, compared to 2 μs and 70 μm for the untreated mc-Si. Additionally, the [Fe] decreased significantly after the process, dropping from 60 ppt to 10 ppt in most regions. Furthermore, the treatment led to a significant decrease in reflectivity, from 25% to 8% at a wavelength of 500 nm. These findings highlight the effectiveness of the PECVD-SiN<sub>x</sub> and H<sub>2</sub> plasma treatments for improving the optoelectronic performance of mc-Si, making them promising options for high-efficiency photovoltaic devices.
ISSN:2073-4352

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