Electronic Quality Enhancement of Multicrystalline Silicon via SiN<sub>x</sub> and H<sub>2</sub> Plasma Passivation Using Plasma-Enhanced Chemical Vapor Deposition for Photovoltaic Applications

Electronic Quality Enhancement of Multicrystalline Silicon via SiN<sub>x</sub> and H<sub>2</sub> Plasma Passivation Using Plasma-Enhanced Chemical Vapor Deposition for Photovoltaic Applications

This study explored advancements in photovoltaic technologies by enhancing the electronic quality of multicrystalline silicon (mc-Si) through silicon nitride (SiN<sub>x</sub>) and hydrogen (H<sub>2</sub>) plasma deposition via plasma-enhanced chemical vapor deposition (PECVD)...

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Bibliographic Details
Main Authors: Achref Mannai, Rabia Benabderrahmane Zaghouani, Karim Choubani, Mohammed A. Almeshaal, Mohamed Ben Rabha, Wissem Dimassi
Format: Article
Language:English
Published: MDPI AG 2025-05-01
Series:Crystals
Subjects:
multicrystalline silicon
PECVD-SiN<sub>x</sub>
PV technologies
effective lifetime
diffusion length
iron concentration
Online Access:https://www.mdpi.com/2073-4352/15/6/498
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