Design of a Low-Latency <roman>d<italic>v</italic></roman>/<roman>d<italic>t</italic></roman> and <roman>d<italic>i</italic></roman>/<roman>d<italic>t</italic></roman> Closed-Loop Active Gate Driver for SiC MOSFETs With Simple Structure

Design of a Low-Latency <roman>d<italic>v</italic></roman>/<roman>d<italic>t</italic></roman> and <roman>d<italic>i</italic></roman>/<roman>d<italic>t</italic></roman> Closed-Loop Active Gate Driver for SiC MOSFETs With Simple Structure

This study addresses the issue of voltage and current overshoot in SiC MOSFET applications by proposing a novel Kelvin-source series active gate driver (AGD). The proposed AGD combines the benefits of existing structures while utilizing a closed-loop d<italic>v</italic>/d<italic>t&...

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Bibliographic Details
Main Authors: Xuhao Zhu, Wu Chen, Yubo Yuan
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Open Journal of Power Electronics
Subjects:
Silicon carbide (SiC)
power MOSFET
active gate driver
voltage and current overshoot
switching loss
electromagnetic interference (EMI)
Online Access:https://ieeexplore.ieee.org/document/11002771/
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https://ieeexplore.ieee.org/document/11002771/

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