Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices

Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices

In this paper, we report the effect of filament radius and filament resistivity on the ZnO, TiO2, WO3 and HfO2 based Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis. The results substantiate decrease in saturated temperature wit...

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Bibliographic Details
Main Authors: T.D. Dongale, K.V. Khot, S.V. Mohite, S.S. Khandagale, S.S. Shinde, V.L. Patil, S.A. Vanalkar, A.V. Moholkar, K.Y. Rajpure, P.N. Bhosale, P.S. Patil, P.K. Gaikwad, R.K. Kamat
Format: Article
Language:English
Published: Sumy State University 2016-11-01
Series:Журнал нано- та електронної фізики
Subjects:
RRAM
Thermal reaction model
Reliability
Nanoelectronic
Online Access:http://jnep.sumdu.edu.ua/download/numbers/2016/4/articles/jnep_2016_V8_04030.pdf
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http://jnep.sumdu.edu.ua/download/numbers/2016/4/articles/jnep_2016_V8_04030.pdf

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