Effects of insertion of an h-AlN monolayer spacer in Pt-WSe2-Pt field-effect transistors
Abstract The growth of two-dimensional hexagonal aluminum nitride (h-AlN) on transition metal dichalcogenide (TMD) monolayers exhibits superior uniformity and smoothness compared to HfO $$_{2}$$ 2 on silicon substrate. This makes an h-AlN monolayer an ideal spacer between the gate oxide material and...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2024-10-01
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| Series: | Scientific Reports |
| Subjects: | |
| Online Access: | https://doi.org/10.1038/s41598-024-74691-z |
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