Investigation of the optical modal gain in an InAsP/AlGaInP quantum dot laser diode structure
The light–current (L–I) and current–voltage (I–V) characteristics of self-assembled InAsP/AlGaInP quantum dots grown by organometallic vapor-phase epitaxy were measured over a temperature range of 160–400 K. The investigated samples had different cavity lengths (1, 2, 3, and 4 mm). Our results show...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-12-01
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| Series: | Results in Optics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S266695012500063X |
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