Investigation of the optical modal gain in an InAsP/AlGaInP quantum dot laser diode structure

The light–current (L–I) and current–voltage (I–V) characteristics of self-assembled InAsP/AlGaInP quantum dots grown by organometallic vapor-phase epitaxy were measured over a temperature range of 160–400 K. The investigated samples had different cavity lengths (1, 2, 3, and 4 mm). Our results show...

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Bibliographic Details
Main Authors: Mohammed S. Al-Ghamdi, Norah A. Al-anazi, Ivan B. Karomi
Format: Article
Language:English
Published: Elsevier 2025-12-01
Series:Results in Optics
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Online Access:http://www.sciencedirect.com/science/article/pii/S266695012500063X
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