Optical Properties of One-Dimensional Structured GaN:Mn Fabricated by a Chemical Vapor Deposition Method
Group III nitride semiconductors with direct band gaps have recently become increasingly important in optoelectronics and microelectronics applications due to their direct band gaps, which cover the whole visible spectrum and a large part of the UV range. Major developments in wide band gap III–V ni...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2013-01-01
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| Series: | Journal of Engineering |
| Online Access: | http://dx.doi.org/10.1155/2013/216259 |
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