Surface Morphology of 6-Inch SiC Single Crystals in Solution Growth on Si-Face, C-Face and (<inline-formula><math display="inline"><semantics><mrow><mn>10</mn><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>) Plane
For solution growth of 6-inch 4H-SiC bulk crystals, the surface step morphology of the crystals grown on Si-face, C-face and (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>10</mn><move...
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MDPI AG
2025-05-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/15/5/472 |
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| author | Gangqiang Liang Jiayi Kuang Yilin Su Yuan Liu |
| author_facet | Gangqiang Liang Jiayi Kuang Yilin Su Yuan Liu |
| author_sort | Gangqiang Liang |
| collection | DOAJ |
| description | For solution growth of 6-inch 4H-SiC bulk crystals, the surface step morphology of the crystals grown on Si-face, C-face and (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>10</mn><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>) plane was systematically characterized by laser confocal microscopy. The 2D-nucleation and step-bunching were likely to occur during the 30 h growth on Si-face, leading to a rough surface with a macro-step height over 60 μm. By contrast, the step heights were maintained at 0.1–1 μm during 60 h growth on C-face, exhibiting good morphological stability for long-term growth. Moreover, the SiC crystal grown on the (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>10</mn><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>) plane illustrated its excellence in producing fine steps, which is attributed to the smaller interfacial energy between the solution and (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>10</mn><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>) substrates, suggesting that it offers a better approach to growing SiC single bulk crystals. |
| format | Article |
| id | doaj-art-76cd55dbf74a480f8609f3dfe5f8ffad |
| institution | OA Journals |
| issn | 2073-4352 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | MDPI AG |
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| series | Crystals |
| spelling | doaj-art-76cd55dbf74a480f8609f3dfe5f8ffad2025-08-20T02:33:38ZengMDPI AGCrystals2073-43522025-05-0115547210.3390/cryst15050472Surface Morphology of 6-Inch SiC Single Crystals in Solution Growth on Si-Face, C-Face and (<inline-formula><math display="inline"><semantics><mrow><mn>10</mn><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>) PlaneGangqiang Liang0Jiayi Kuang1Yilin Su2Yuan Liu3School of Materials, Tsinghua University, Beijing 100084, ChinaSchool of Materials, Tsinghua University, Beijing 100084, ChinaTsingyan Semiconductor, Suzhou 215127, ChinaSchool of Materials, Tsinghua University, Beijing 100084, ChinaFor solution growth of 6-inch 4H-SiC bulk crystals, the surface step morphology of the crystals grown on Si-face, C-face and (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>10</mn><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>) plane was systematically characterized by laser confocal microscopy. The 2D-nucleation and step-bunching were likely to occur during the 30 h growth on Si-face, leading to a rough surface with a macro-step height over 60 μm. By contrast, the step heights were maintained at 0.1–1 μm during 60 h growth on C-face, exhibiting good morphological stability for long-term growth. Moreover, the SiC crystal grown on the (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>10</mn><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>) plane illustrated its excellence in producing fine steps, which is attributed to the smaller interfacial energy between the solution and (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>10</mn><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>) substrates, suggesting that it offers a better approach to growing SiC single bulk crystals.https://www.mdpi.com/2073-4352/15/5/472Top-seeded solution growthSilicon carbideSurface morphology |
| spellingShingle | Gangqiang Liang Jiayi Kuang Yilin Su Yuan Liu Surface Morphology of 6-Inch SiC Single Crystals in Solution Growth on Si-Face, C-Face and (<inline-formula><math display="inline"><semantics><mrow><mn>10</mn><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>) Plane Crystals Top-seeded solution growth Silicon carbide Surface morphology |
| title | Surface Morphology of 6-Inch SiC Single Crystals in Solution Growth on Si-Face, C-Face and (<inline-formula><math display="inline"><semantics><mrow><mn>10</mn><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>) Plane |
| title_full | Surface Morphology of 6-Inch SiC Single Crystals in Solution Growth on Si-Face, C-Face and (<inline-formula><math display="inline"><semantics><mrow><mn>10</mn><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>) Plane |
| title_fullStr | Surface Morphology of 6-Inch SiC Single Crystals in Solution Growth on Si-Face, C-Face and (<inline-formula><math display="inline"><semantics><mrow><mn>10</mn><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>) Plane |
| title_full_unstemmed | Surface Morphology of 6-Inch SiC Single Crystals in Solution Growth on Si-Face, C-Face and (<inline-formula><math display="inline"><semantics><mrow><mn>10</mn><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>) Plane |
| title_short | Surface Morphology of 6-Inch SiC Single Crystals in Solution Growth on Si-Face, C-Face and (<inline-formula><math display="inline"><semantics><mrow><mn>10</mn><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>) Plane |
| title_sort | surface morphology of 6 inch sic single crystals in solution growth on si face c face and inline formula math display inline semantics mrow mn 10 mn mover accent true mrow mn 1 mn mrow mo ¯ mo mover mover accent true mrow mn 2 mn mrow mo ¯ mo mover mrow semantics math inline formula plane |
| topic | Top-seeded solution growth Silicon carbide Surface morphology |
| url | https://www.mdpi.com/2073-4352/15/5/472 |
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