Surface Morphology of 6-Inch SiC Single Crystals in Solution Growth on Si-Face, C-Face and (<inline-formula><math display="inline"><semantics><mrow><mn>10</mn><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>) Plane

Surface Morphology of 6-Inch SiC Single Crystals in Solution Growth on Si-Face, C-Face and (<inline-formula><math display="inline"><semantics><mrow><mn>10</mn><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>) Plane

For solution growth of 6-inch 4H-SiC bulk crystals, the surface step morphology of the crystals grown on Si-face, C-face and (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>10</mn><move...

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Bibliographic Details
Main Authors: Gangqiang Liang, Jiayi Kuang, Yilin Su, Yuan Liu
Format: Article
Language:English
Published: MDPI AG 2025-05-01
Series:Crystals
Subjects:
Top-seeded solution growth
Silicon carbide
Surface morphology
Online Access:https://www.mdpi.com/2073-4352/15/5/472
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