Surface Morphology of 6-Inch SiC Single Crystals in Solution Growth on Si-Face, C-Face and (<inline-formula><math display="inline"><semantics><mrow><mn>10</mn><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>) Plane

For solution growth of 6-inch 4H-SiC bulk crystals, the surface step morphology of the crystals grown on Si-face, C-face and (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>10</mn><move...

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Bibliographic Details
Main Authors:	Gangqiang Liang, Jiayi Kuang, Yilin Su, Yuan Liu
Format:	Article
Language:	English
Published:	MDPI AG 2025-05-01
Series:	Crystals
Subjects:	Top-seeded solution growth Silicon carbide Surface morphology
Online Access:	https://www.mdpi.com/2073-4352/15/5/472
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Summary:	For solution growth of 6-inch 4H-SiC bulk crystals, the surface step morphology of the crystals grown on Si-face, C-face and (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>10</mn><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>) plane was systematically characterized by laser confocal microscopy. The 2D-nucleation and step-bunching were likely to occur during the 30 h growth on Si-face, leading to a rough surface with a macro-step height over 60 μm. By contrast, the step heights were maintained at 0.1–1 μm during 60 h growth on C-face, exhibiting good morphological stability for long-term growth. Moreover, the SiC crystal grown on the (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>10</mn><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>) plane illustrated its excellence in producing fine steps, which is attributed to the smaller interfacial energy between the solution and (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>10</mn><mover accent="true"><mrow><mn>1</mn></mrow><mo>¯</mo></mover><mover accent="true"><mrow><mn>2</mn></mrow><mo>¯</mo></mover></mrow></semantics></math></inline-formula>) substrates, suggesting that it offers a better approach to growing SiC single bulk crystals.
ISSN:	2073-4352

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