Simulation and Analysis of Static Temperature Characteristics of 4H-SiC MOSFET

Simulation and Analysis of Static Temperature Characteristics of 4H-SiC MOSFET

SiC materials have excellent properties such as large forbidden band width, high critical electric field, high carrier saturation drift speed and high thermal conductivity, making them widely used in high temperature, high voltage, high power and other fields. In order to investigate the influence o...

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Bibliographic Details
Main Authors: Liang ZENG, Cuixia WANG, Jiangfeng WU, Youling YU, Chengzhan LI, Xing DU
Format: Article
Language:zho
Published: Editorial Department of Electric Drive for Locomotives 2020-01-01
Series:机车电传动
Subjects:
4H-SiC MOSFET
silicon carbide
static characteristics
temperature characteristics
device simulation
Online Access:http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2020.01.009
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