Simulation and Analysis of Static Temperature Characteristics of 4H-SiC MOSFET
SiC materials have excellent properties such as large forbidden band width, high critical electric field, high carrier saturation drift speed and high thermal conductivity, making them widely used in high temperature, high voltage, high power and other fields. In order to investigate the influence o...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | zho |
| Published: |
Editorial Department of Electric Drive for Locomotives
2020-01-01
|
| Series: | 机车电传动 |
| Subjects: | |
| Online Access: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2020.01.009 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|