Probe device for electrical measurements of parameters thin doped films ZnO

Probe device for electrical measurements of parameters thin doped films ZnO

Probe device for electrical measurements of parameters thin doped films ZnO is considered. On the base of use of this probe device there is measured by the Hall E ffect method the concentration of electrons of the conductivity in indium doped thin films ZnO with thickness in the interval (0,065–...

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Bibliographic Details
Main Authors: A. I. Blesman, R. B. Burlakov
Format: Article
Language:English
Published: Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education 2020-03-01
Series:Омский научный вестник
Subjects:
electrical measurements of parameters
probe device
hall effect method
thin films zno
Online Access:https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/1%20(169)/67-72%20%D0%91%D0%BB%D0%B5%D1%81%D0%BC%D0%B0%D0%BD%20%D0%90.%20%D0%98.,%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf
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