Probe device for electrical measurements of parameters thin doped films ZnO
Probe device for electrical measurements of parameters thin doped films ZnO is considered. On the base of use of this probe device there is measured by the Hall E ffect method the concentration of electrons of the conductivity in indium doped thin films ZnO with thickness in the interval (0,065–...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2020-03-01
|
| Series: | Омский научный вестник |
| Subjects: | |
| Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/1%20(169)/67-72%20%D0%91%D0%BB%D0%B5%D1%81%D0%BC%D0%B0%D0%BD%20%D0%90.%20%D0%98.,%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|