Probe device for electrical measurements of parameters thin doped films ZnO
Probe device for electrical measurements of parameters thin doped films ZnO is considered. On the base of use of this probe device there is measured by the Hall E ffect method the concentration of electrons of the conductivity in indium doped thin films ZnO with thickness in the interval (0,065–...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2020-03-01
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| Series: | Омский научный вестник |
| Subjects: | |
| Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/1%20(169)/67-72%20%D0%91%D0%BB%D0%B5%D1%81%D0%BC%D0%B0%D0%BD%20%D0%90.%20%D0%98.,%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf |
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| Summary: | Probe device for electrical measurements of parameters thin doped
films ZnO is considered. On the base of use of this probe device
there is measured by the Hall E ffect method the concentration
of electrons of the conductivity in indium doped thin films ZnO
with thickness in the interval (0,065–0,3) μm concentration of
electrons of the conductivity in the interval (2–3,4)∙1019 cm–3 and
low mobility of electrons of the conductivity — (4–8,5) cm2
/B∙s.
Dignity of probe device is a possibility of the reduction of the
voltage asymmetry of hall probes. |
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| ISSN: | 1813-8225 2541-7541 |