Bandgap Engineering in InAs/GaSb II Superlattices: Modulation and Vacancy Defects Analysis
The computational analysis of InAs/GaSb type-II superlattices utilizing density functional theory (DFT) with pseudopotentials has been performed. The PBE+U method was employed to correct for the strong correlation effects of the P orbitals of In, As, Ga, and Sb, thereby improving the accuracy of the...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-03-01
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| Series: | Photonics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2304-6732/12/3/249 |
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