A new insight on the thermal resistance source of diamond -SiC interface: Based on non-equilibrium molecular dynamics

A new insight on the thermal resistance source of diamond -SiC interface: Based on non-equilibrium molecular dynamics

Diamond/silicon carbide (diamond/SiC) is the future development of thermal management materials for it's high thermal conductivity, and interface research is the key to improve the performance of diamond/SiC. In this paper, we focus on the transition layer SixC(1-x) between diamond and SiC for...

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Bibliographic Details
Main Authors: Kunlong Zhao, Huagang Lyu, Biao Wang, Zhijie Ye, Wenxin Cao, Dongmeng Shi, Xiaobin Hao, Sen Zhang, Zhuochao Wang, Xiaolei Wang, Xingchun Xu, Jiaqi Zhu
Format: Article
Language:English
Published: Elsevier 2025-07-01
Series:Journal of Materials Research and Technology
Subjects:
Silicon carbide
Diamond
Interfacial thermal resistance
Non-equilibrium molecular dynamics
Phonon density of states
Phonon group velocity
Online Access:http://www.sciencedirect.com/science/article/pii/S2238785425014498
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