Optimizing Pulse Conditions for Enhanced Memory Performance of Se-Based Selector-Only Memory

Optimizing Pulse Conditions for Enhanced Memory Performance of Se-Based Selector-Only Memory

In this study, we investigated the effect of pulse falling time (Tfall) on the electrical characteristics of SiGeAsSe-based selector-only memory (SOM) devices. Our experimental results demonstrate that increasing the <inline-formula> <tex-math notation="LaTeX">$\mathrm { T_{fal...

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Bibliographic Details
Main Authors: Jangseop Lee, Taras Ravsher, Daniele Garbin, Sergiu Clima, Robin Degraeve, Attilio Belmonte, Hyunsang Hwang, Inhee Lee
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Chalcogenide
cross-point array (XPA)
ovonic threshold switch (OTS)
ReRAM
selector-only memory (SOM)
Online Access:https://ieeexplore.ieee.org/document/10949046/
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