Direct Observation of Substantial Phonon Nonequilibrium Near Nanoscale Hotspots in Gallium Nitride

Abstract Phonon modal nonequilibrium is believed to widely exist around nanoscale hotspots, which can significantly affect the performance of nano‐electronic and optoelectronic devices. However, such a phenomenon has not been explicitly observed in 3D device semiconductors at the nanoscale. Here, by...

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Bibliographic Details
Main Authors: Jiaxuan Xu, Xiaona Huang, Yufei Sheng, Qiangsheng Sun, Hongkai Zhang, Hua Bao, Yanan Yue
Format: Article
Language:English
Published: Wiley 2025-03-01
Series:Advanced Science
Subjects:
Online Access:https://doi.org/10.1002/advs.202411040
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